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Advanced Gate Electrode with Depletion Suppression and Tunable Workfunction


Stanford Reference:

00-210


Abstract


This patented gate structure provides a tunable gate workfunction for transistor threshold adjustment, and at the same time increases the carrier concentration in the gate electrode, to enhance the transistor drive. Using this approach eliminates a wide range of problems that are currently faced in MOS device technology, such as carrier depletion in the gate and threshold implantation into the channel region, while increasing the transistor speed. This technology is especially useful for chips at the deep-sub-micron level, and will be critical for nano-scale MOSFETs. The degree of gate workfunction adjustability and depletion suppression has been demonstrated experimentally with existing materials and fabrication techniques.

Applications


  • MOS transistors
  • Nano-scale devices

Advantages


  • Provides a wide range of adjustability of gate workfunction
  • Allows for more flexibility in device design
  • Eliminates gate depletion effect in deep-sub-micron devices
  • Enables threshold voltage control in nano-scale or thin-body device
  • Reduces threshold implantation in the channel region
  • Enhances carrier mobility in the channel region
  • Achievable with current generation of deposition technology

Innovators & Portfolio


  • James Gibbons   
  • Judy Hoyt   
  • Steven Hung   

Patent Status



Date Released

 6/22/2001
 

Licensing Contact


Linda Chao, Senior Associate
(650) 725-9408 (Direct)
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S00-210 Advanced Gate Electrode with Depletion Suppression and Tunable Workfunction