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Measurement of Metallic Film Thickness Using a New Optical Technique


Stanford Reference:

02-288


Abstract


The fabrication of integrated circuits relies on measurement tools that can provide accurate information on the thickness of dielectric and metallic thin films. Numerous techniques exist for the measurement of dielectric films; however, these methods are ineffective for measuring metallic films, in particular Cu interconnects, which link electronic transistors in integrated circuits. This invention introduces a non-invasive optical technique for measuring the thickness of a thin metallic film. By directing light toward the film using special optics and collecting angle-dependent information about the reflected light, this patented technique can be used to determine the thickness of Cu films up to a few 100 nm, the diameter of current Cu interconnects.

Applications


  • Metrology equipment for semiconductors
  • Fabrication of integrated circuits

Advantages


  • Fast and accurate measurement
  • Non-invasive technique
  • Can be applied to both state-of-the-art ICs and those applied in future IC generations

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Innovators & Portfolio



Patent Status



Date Released

 7/30/2013
 

Licensing Contact


Anne Kopf-Sill, Licensing Associate
(650)498-8015 (Business)
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Related Keywords


metrology   nano-structured thin films   semiconductor: testing and analysis   materials: thin film   metal nanoparticle   optical measurement   plasmon   02-288   
 

   

  

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