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Formation method of semiconductor film, manufacturing method of semiconductor device, and semiconductor device


Stanford Reference:

08-163


Abstract


Engineers in Prof. Krishna Saraswat’s laboratory have developed a patented method for forming semiconductor thin films at low temperature (<400 degrees C). This process successfully achieves germanium growth by using a diboran pretreatment and does not require the high temperatures that can destroy underlying structures and devices. The technology can be used for thin film transistors (TFT), on-chip sensors, on-chip MEMS, and monolithic 3D integrated circuits (particularly for gate electrodes and channel materials).

Applications


  • Thin film deposition for semiconductor devices such as:
    • TFTs
    • sensors
    • MEMS
    • 3D integrated circuits – gate electrodes and channel materials

Advantages


  • Low temperature - <400 degrees C, protects underlying structures
  • Advantages of 3D integrated circuits:
    • shorter spans to address the power/delay problems of wires
    • increased functions per foot print area without ULSI device scaling

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Innovators & Portfolio



Patent Status



Date Released

 7/22/2014
 

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Related Keywords


CMOS Sensor Chip   GeOI (Germanium-on-insulator)   Germanium   materials: thin film   MEMS sensors   mems-structure   nano-structured thin films   on-chip networks   semiconductor manufacturing   Silicon on Insulator micromachining   thin film: electronics   thin film deposition   thin film transistors   thin-film sensors   VLSI   
 

   

  

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