Field-Effect Transistor (CNFET), transparent electrodes and three-dimensional integration of CNFETs

Stanford researchers have developed a novel method for wafer-scale production of aligned and ultra-high density carbon nanotubes (CNTs) and nanotube grid. The CNTs produced with this controlled, multiple-transfer technology could be used for making very high performance CNT Field-Effect Transistors (CNFET). The process also allows for three-dimensional integration of the CNFET in a circuit. In addition, the technique can be used to manufacture low cost, highly transparent and low-resistivity electrodes for flexible electronics and flat panel displays.