High speed Radiation detection using MODFET semiconductor devices

Stanford researchers have developed a novel radiation detection technology using a well-known class of high-speed transistor technology called a high electron mobility transistor (HEMT). The invention comprises super high-speed (50GHz) bandwidth particle detection in a 2-D array, high signal-to-noise ratio, and the ability to measure energy for each incoming particle. A main application for the concept is in X-ray imaging applications, such as X-ray CT, digital mammography systems. The concept enables counting of each individual X-ray photon while simultaneously analyzing its energy. This cannot be achieved in the same manner by currently available x-ray detectors. Importantly, with the increase in signal-to-noise ratio, physicians can considerably reduce the radioactive dose given to patients without sacrificing the image quality of the scan. This technology is enabled by 2-D arrays of ultra-fast HEMT/PHEMT semiconductor detectors.