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Nitrogen Doped Aluminum Oxide Resistive Random Access Memory


Stanford Reference:

11-055


Abstract


Stanford researchers in Electrical Engineering have patented a nitrogen-doped aluminum oxide Resistive Random Access Memory (RRAM) device. High-speed operation, superior scalability and feasibility of 3D integration have been demonstrated. In contrast to most reported complicated designs, the Stanford memory cell is compatible with CMOS fabrication, requires no forming and uses ultra-low voltage and current. The patented RRAM device is capable of multi-bit storage, reliable for over 100K switching cycles and 10 years retention at 125 degrees C.


(a) Cross-sectional RRAM stack on standard 180 nm CMOS
(b) Expanded view of the 1 μm×1 μm RRAM cell

Ongoing Research
The inventors are currently conducting studies to improve film properties and evaluate various deposition methods.


Applications


  • Non-volatile memory
  • Potential replacement for Flash

Advantages


  • CMOS compatible fabrication
  • Simple fabrication process
  • Low voltage, low power operations
  • Demonstrated reliability
  • Potential multi-bit storage per cell

Publications


  • Wanki Kim, Sung Il Park, Zhiping Zhang, Young Yang-Liauw, Deepak Sekar, H.-S. Philip Wong and S. Simon Wong, “Forming-Free Nitrogen-Doped Aluminum Oxide RRAM with Sub-Microamps Programming Current” presented at the 2011 Symposia on VLSI Technology and Circuits, 14 June 2011.

Innovators & Portfolio


  • Wanki Kim   
  • Sung Il Park   
  • S. Simon Wong   
  • Zhiping Zhang   

Patent Status



Date Released

 5/12/2015
 

Licensing Contact


Kirsten Leute, Senior Associate
kleute@stanford.edu
1-650-723-4374 (Business)

[-] Map/Timeline

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Related Keywords


RRAM   ultra-low voltage   Resistive random-access memory   non-volatile memory   computer memory   flash memory   cache memory   semiconductor: memory   non volatile memory device   non-volatile storage   
 

   

  

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