Nitrogen Doped Aluminum Oxide Resistive Random Access Memory

Stanford Reference:

11-055

Abstract

Stanford researchers in Electrical Engineering have developed a nitrogen-doped aluminum oxide Resistive Access Memory (RRAM). The memory cell requires no forming and uses ultra-low voltage and current. The cell is capable of multi-bit storage, reliable for over 100K switching cycles and 10 years retention at 125 degrees C.

Ongoing Research
The inventors are currently conducting studies to improve film properties and evaluate other deposition methods.

Applications

Non-volatile memory
Potential replacement for Flash

Advantages

Compatible with CMOS
Simple process
Low voltage, low power operations
Demonstrated reliability
Potential multi-bit storage per cell

Publications

Wanki Kim, Sung Il Park, Zhiping Zhang, Young Yang-Liauw, Deepak Sekar, H.-S. Philip Wong and S. Simon Wong, “Forming-Free Nitrogen-Doped Aluminum Oxide RRAM with Sub-Microamps Programming Current” presented at the 2011 Symposia on VLSI Technology and Circuits, 14 June 2011.

Innovators & Portfolio

Wanki Kim
Sung Il Park
S. Simon Wong more technologies from S. Simon Wong »
Zhiping Zhang

Date Released

1/30/2013

Licensing Contact

Kirsten Leute, Senior Associate
kleute@stanford.edu
1-650-723-4374 (Business)

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Related Keywords

RRAM ultra-low voltage Resistive random-access memory non-volatile memory computer memory semiconductor: memory

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S11-055 Nitrogen Doped Aluminum Oxide Resistive Random Access Memory

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