Facilitating the controlled growth of catalysts and dielectrics on graphene surfaces

Stanford researchers have patented a method of growing catalyst and dielectric nanocrystals on graphene surfaces. Hydrogen plasma treats the graphene surface, controls nanocrystal growth, and maintains graphene's properties while catalysts or dielectrics are deposited via Atomic Layer Deposition. The method is suitable for deposition on graphene, hexagonal boron nitride, or dichalcogenides, including molybdenum sulfide, or tungsten selenide. It's a cost-effective and production compatible way of addressing existing challenges in fuel and photoelectrochemical cells, facilitating top gate transistor device fabrication on graphene, and activating graphene in biological and sensing applications.

Stage of Research
Researchers used controlled radio-frequency hydrogen plasma to treat graphene and then grow various nanocrystals and dielectric thin films using Atomic Layer Deposition, while retaining the graphene's intrinsic properties. Ongoing research in surface chemistry and devices is underway.