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Docket #: S10-311

Methods of Establishing Low-Resistance Electrical Contact to Carbon Nanostructures with Graphitic Interfacial Layer

Researchers working at Stanford University and the University of California, Berkeley have developed a novel method for establishing effective electrical contact inside electronic devices that contain carbon nanostructures. Within these devices, a key difficulty is the small contact area that electrically couples the metal electrode with the carbon nanostructures. This invention introduces a graphitic interfacial layer between the carbon nanotubes and the metal; this method has been experimentally demonstrated to lower the electrical resistance to the carbon nanostructure by around an order of magnitude. The low cost and simple design of this invention can be easily applied to any electronic device based on a carbon nanostructure.

Applications

  • Any electronic device that is based on carbon nanostructures
    • Carbon Nanotube Field Effect Transistor
    • Carbon Nanotube sensors
    • Carbon Nanotubes memory switch
    • Carbon Nanotubes interconnect wiring
    • Carbon Nanotube interconnect wiring
    • Carbon Nanotube Field Effect Transistor
    • Carbon Nanotube transparent electrode
    • Graphene Interconnect Wiring
    • Graphene transparent electrode

Advantages

  • Ease of Use
    • The amorphous carbon is easily graphitized
  • Simple
    • The invention introduces a straight forward method that is easily applied to electronic devices
  • Low Cost
  • Lowers Resistance
    • Experimentally shown to lower electrical resistance in carbon nanostructure by around an order of magnitude

Publications

Stage of Development

This invention has been experimentally tested, showing that it can lower electrical resistance by around an order of magnitude.

Continuing Research

Variations and Modifications to the interface layer are still being tested.

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