S20-362 Silicon-Carbide-on-Insulator via photoelectrochemical etching Stanford researchers have improved upon a prior technology, S18-553 Silicon-Carbide-on-Insulator (SiCOI) Fabrication , to produce high quality, wafer-scale SiCOI. Daniil Lukin Jelena Vuckovic
S13-223 High Throughput Fabrication of Thin Single Crystal Silicon Sheets Researchers in Stanford's Nanoscale Prototyping Laboratory have developed a simple, high throughput method to fabricate ultra-thin, defect-free, single crystal silicon sheets at a competitive cost. Andrei Iancu Friedrich Prinz