Researchers at Stanford have developed a technique that can rapidly and sequentially separate multiple sets of III-V solar cell thin films grown as a stack on one III-V wafer.
Stanford researchers have developed a method for etching microchannels through silicon substrates. Specifically, this method can produce wafers where the two sides have different features as well as through channels.
This invention is a set of structures and associated processes to integrate GaN with Diamond to develop a full complementary CMOS device capable of operation in high power and high temperature applications.