Researchers at Stanford University have developed Schottky contacts for aluminum nitride-based microelectronic devices. The contacts enable reliable device operation at up to 600 ºC, opening up opportunities for high temperature microelectronic performance.
Stanford researchers in the Pop Lab have developed a method of making low resistance, good conductivity, temperature tolerant, CMOS processing compatible contacts for 2d semiconductor materials based on transition metal dihalcogenides (TMD's).