S04-132 A Method for Heteroepitaxial Growth of Germanium on Silicon Stanford researchers have patented a growth and anneal process for growing heteroepitaxial-germanium directly onto silicon. Krishna Saraswat Chi On Chui Ammar Nayfeh Takao Yonehara
S15-228 CMOS-Compatible Single Crystal Metal Growth Researchers in Profs. Jonathan Fan and Jim Plummer's laboratory have patented a generalized, CMOS-compatible process to fabricate single crystal metal components on amorphous insulator substrates. James Plummer Kai Zhang Xue Bai Jonathan Fan