S20-362 Silicon-Carbide-on-Insulator via photoelectrochemical etching Stanford researchers have improved upon a prior technology, S18-553 Silicon-Carbide-on-Insulator (SiCOI) Fabrication , to produce high quality, wafer-scale SiCOI. Daniil Lukin Jelena Vuckovic
S18-189 Low temperature, cost-effective process for manufacturing silicon radiation detectors Researchers at the SLAC National Accelerator Laboratory have developed a cost-effective method for using low temperature microwave annealing to create diode termination contacts on silicon sensors. Christopher Kenney Julie Segal