Stanford researchers have developed a damage free method for activating buried p-type or Mg-doped epitaxial layers in III-nitride devices that improves performance and can reduce device cost when used as edge termination.
Stanford researchers have patented a fabrication process for monolithic integration of different epitaxial materials on the same substrate for improved coupling of optoelectronic devices.
Researchers in Profs. Jonathan Fan and Jim Plummer's laboratory have patented a generalized, CMOS-compatible process to fabricate single crystal metal components on amorphous insulator substrates.
Stanford researchers at the Cui Lab have designed a self-aligned hybrid metal-dielectric surface that offers unparalleled performance in applications where both a transparent contact and a photon management texture are needed.