S20-277 Advanced precursor for selective atomic layer deposition of Al2O3 Selective atomic layer deposition (ALD) is a critical component of advanced manufacturing and offers an alternative to lithographic procedures. Stacey Bent Il-Kwon Oh
S20-290 Selective Atomic Layer Deposition of Al2O3 with a New Precursor and Small Molecule Inhibitor Researchers from the Bent group have identified a new precursor and small molecule inhibitor combination for Al2O3 area-selective atomic layer deposition (ALD). Josiah Yarbrough Il-Kwon Oh Stacey Bent