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Docket #: S11-027

Highly Oriented Crystalline Silicon Film for Photovoltaic Cells

Stanford researchers have patented a low cost, textured crystalline silicon (c-Si) photovoltaic film fabricated via scalable, ion beam assisted deposition (IBAD) on display glass. Crystalline silicon (c-Si) is a nearly ideal photovoltaic (PV) material, but expensive and energy intensive silicon wafer fabrication makes up nearly half the cost of a typical photovoltaic module. In order to reduce PV cost, the inventors used a template seed layer of calcium fluoride (which has a close lattice match with silicon) to grow biaxially textured heteroepitaxial c-Si on glass, a low cost substrate. This process method controls the grain boundary alignment to improve microelectronic efficiency and performance. IBAD is a well-established, room-temperature technique that is amenable to a variety of substrates and process scaling. This technology could be used to coat large area and long length substrates with high performance c-Si to help achieve low-cost solar cells.


Stage of Research:
The inventors have fabricated a proof-of-concept epitaxial film c-Si solar cell with an open circuit voltage of 375 mV.

Applications

  • c-Si film with end user applications in:
    • Photovoltaics
    • Electronic and optoelectronic devices, integrated circuits, optical sensors
    • Magnetic devices
    • Displays

Advantages

  • High performance photovoltaic material- polycrystalline silicon thin film with highly oriented low-angle boundaries have reduced dislocation density and increased carrier lifetime
  • Scalable & Versatile - low temperature process is compatible with a variety of substrates (stainless steel, alloys, plastics and glass) and large area substrates
  • Low fabrication cost compared to silicon wafer fabrication

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