In-situ rubber matrixes (iRUM) for elastic and photo-patternable semiconductors

Stanford inventors have developed a molecular design concept that allows for the development of stretchable electronics with desirable elasticity, solvent resistance, and photopatternability using covalently-embedded in-situ rubber matrix formation (iRUM). iRUM precursors offers improved miscibility, increases charge transport reactivity, and enables improved crosslinking density of composite films. The iRUM approach results in elastic and photo-patternable transistors that can retain charge carrier mobility even after stretching to 100% strain. The resulting stretchable material can also achieve high mobility retention after 1000 stretching-releasing cycles at 50% strain, and achieve stable 5000 cycle lives which is 5 times longer than previously reported methods. The inventors additionally fabricated a fully patterned, elastic transistor array by consequtively photo-patterning dielectrics and semiconductors to demonstrate multi-layer device fabrication.

Stage of Development
The inventors have fabricated a fully patterned elastic transistor, demonstrating the feasibility of integrated solution-processed electronics manufacturing