Wide bandgap (WBG) power semiconductors with reduced gate loss

Stanford researchers have designed a high-voltage cascode GaN/SiC device combining the advantages of both a GaN and an SiC device (i.e. reduced gate loss/simple gate drive requirements)
Previous designs to reduce gate loss employ resonant gate drivers which require additional components increasing cost and complexity of the circuit. This method is much simpler since it does not add additional passive components, nor require the design of the resonant network.
WBG power semiconductors can be applied to many high-frequency and high-power applications, such as wireless power transfer applications and radio-frequency plasma generations. Because of the reduction in device gate loss, researchers can apply higher current through the device with the same thermal limit, which increases the power density of the power electronics system.

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Stage of Development