Stanford researchers have developed a fast and energy-efficient computational platform-based on the Potts Machine model that can solve large-scale, combinatorial optimization problems.
Stanford researchers in the Pop Lab have developed a method of making low resistance, good conductivity, temperature tolerant, CMOS processing compatible contacts for 2d semiconductor materials based on transition metal dihalcogenides (TMD's).
Image sensors are used across the board in high-resolution image sensing technologies, and critically rely on their ability to separate colors of light.
Stanford researchers have patented a silicon germanium (SiGe) electroabsorption modulator that can operate well in excess of 10 Gbps and is entirely compatible with Silicon (Si) complementary metal-oxide semiconductor (CMOS) integrated circuit fabrication.
Stanford researchers have patented a fabrication process for monolithic integration of different epitaxial materials on the same substrate for improved coupling of optoelectronic devices.
Engineers in Prof. Shan Wang's laboratory have developed a CMOS-compatible fabrication method to integrate compact, tunable magnetic components into mainstream semiconductor electronic devices.
Researchers in Stanford's Nanoscale Prototyping Laboratory have developed a low-temperature process for fabricating etch-resistant, pinhole-free spacer dielectrics a few nanometers thick.
Stanford researchers have patented an image sensor that overcomes frame rate and power consumption limits for high-speed mega-pixel imaging, and therefore can extend battery life for mobile phone cameras.