Engineers in Prof. H.-S. Philip Wong's laboratory have developed a lower power, three-dimensional resistive random access memory (RRAM) device using an atomically thin graphene edge electrode.
This patented technology is a scalable, reliable non-volatile memory device that uses graphene as a thermal barrier to improve energy efficiency and reliability of phase change material (PCM).
Researchers working at Stanford University and the University of California, Berkeley have developed a novel method for establishing effective electrical contact inside electronic devices that contain carbon nanostructures.