Researchers in the DeSimone Research Group have developed a high-resolution injection Continuous Liquid Interface Production (iCLIP) 3D printing process.
Engineers in Prof. Zhenan Bao's laboratory have developed a fully elastic, highly stretchable fluorinated polymer that can be used as a photoresist with standard lithography techniques for precise patterning of flexible electronic devices.
Stanford researchers have patented a silicon germanium (SiGe) electroabsorption modulator that can operate well in excess of 10 Gbps and is entirely compatible with Silicon (Si) complementary metal-oxide semiconductor (CMOS) integrated circuit fabrication.
Stanford researchers have patented a fabrication process for monolithic integration of different epitaxial materials on the same substrate for improved coupling of optoelectronic devices.
Researchers in Profs. Jonathan Fan and Jim Plummer's laboratory have patented a generalized, CMOS-compatible process to fabricate single crystal metal components on amorphous insulator substrates.
Researchers in Prof. James Plummer's laboratory have developed a patented silicon-compatible negative differential resistance (NDR) device with high peak to valley current ratios (PVCR's).