Stanford researchers have patented a silicon germanium (SiGe) electroabsorption modulator that can operate well in excess of 10 Gbps and is entirely compatible with Silicon (Si) complementary metal-oxide semiconductor (CMOS) integrated circuit fabrication.
Stanford researchers have patented a fabrication process for monolithic integration of different epitaxial materials on the same substrate for improved coupling of optoelectronic devices.
Researchers in Stanford's Nanoscale Prototyping Laboratory have developed a low-temperature process for fabricating etch-resistant, pinhole-free spacer dielectrics a few nanometers thick.