Researchers at Stanford are designing a class of "2.5-dimensional" microwave cavities that enables coupling/interaction between microwave photons and solid-state quantum spins in a way which is strong compared to loss.
Engineers in Prof. H.-S. Philip Wong's laboratory have developed a lower power, three-dimensional resistive random access memory (RRAM) device using an atomically thin graphene edge electrode.
Engineers in Prof. Krishna Saraswat's laboratory have developed a scalable 1-transistor (1T) dynamic random access memory (DRAM) with a gallium phosphide (GaP) source-drain on silicon.