Researchers at Stanford have developed a technique that can rapidly and sequentially separate multiple sets of III-V solar cell thin films grown as a stack on one III-V wafer.
Stanford researchers in the Fan Lab have developed a method that dramatically accelerates and optimizes metamaterial design with little computational resource and time using generative neural networks.
Stanford researchers in the Fan Lab have developed a photonic device optimizer that generates designs with hard geometric constraints to guarantee device fabricability.
These light trapping solar cell structures increase optical absorption and carrier collection, improving efficiency by 24%, while significantly reducing the solar cell active layer thickness and thus lowering cost.
Researchers at Stanford have developed a structure for a Low-Threshold Germanium laser that is easily integrable into electronic and photonic circuits, and competitive with current state-of-the-art III-V lasers.
Stanford researchers at the Cui Lab have designed a self-aligned hybrid metal-dielectric surface that offers unparalleled performance in applications where both a transparent contact and a photon management texture are needed.
Electronic devices made from single crystal thin films attached to inexpensive support substrates offer reduced material costs compared to wafer-based devices; however, scalable and inexpensive processes for producing these single crystal film structures have remained elusive.
Solar cells containing halide perovskite absorbers have shown large improvements in power conversion efficiency over the last eight years and now exceed 20%. This makes them competitive with many commercial technologies like polycrystalline silicon and CdTe.
Stanford researchers have for the first time, demonstrated the use of scaffolding to increase the mechanical and chemical stability of perovskite solar cells.
Stanford researchers have patented a crystalline germanium nanostructure device and method of forming a continuous polycrystalline Ge film (5-500nm thick poly-Ge) with crystalline Ge islands of preferred orientation.