Scientists in the Zhenan Bao Research Group at Stanford developed a process for direct photo-patterning of electronic polymers that improves device density of elastic circuits over 100x.
Engineers in Prof. Zhenan Bao's laboratory have developed a fully elastic, highly stretchable fluorinated polymer that can be used as a photoresist with standard lithography techniques for precise patterning of flexible electronic devices.
Stanford researchers have patented a crystalline germanium nanostructure device and method of forming a continuous polycrystalline Ge film (5-500nm thick poly-Ge) with crystalline Ge islands of preferred orientation.
Stanford researchers have developed and tested a new method of stably and strongly doping CNTs and graphene using MoOx as a nontoxic, inexpensive, vacuum or solution deposited alternative to strong liquid acids.
Researchers in Prof. Zhenan Bao's lab at Stanford have developed a series of imidazole derivatives for solution processed, n-type doped organic electronic devices.