Notice: Undefined index: HTTP_ACCEPT_LANGUAGE in C:\inetpub\wwwroot\technology_detail.php on line 331
 Technology Detail


The Office of Technology Licensing was established in 1970 to transfer technologies developed at Stanford. Find out more about OTL's history, mission, staff, and statistics.

Login to TechFinder » 

A Novel Heterostructure FET with High On Current and Low Leakage


Stanford Reference:

06-093


Abstract


Engineers in Prof. Krishna Saraswat’s laboratory have developed and patented a heterostructure technology for semiconductor devices exhibiting high channel mobility and low leakage including CMOS-compatible semiconductor devices and MOSFETs. This structure dramatically reduces (100X) band-to-band tunneling (BTBT) leakage currents while maintaining very high drive currents. The technology can be applied to a range of high-mobility materials (such as Ge, InSb, InAs, and strained Ge or SiGe). These heterostructures will allow FET (field effect transistor) scaling down to the sub 15 nm range.

Applications


  • Semiconductors – MOSFETs and other devices

Advantages


  • CMOS compatible
  • Low BTB leakage
  • High drive currents

Publications



Acknowledgement


This work was supported by the Microelectronics Advanced Research Corporation (MARCO).

Related Web Links



Innovators & Portfolio



Patent Status



Date Released

 12/2/2014
 

Licensing Contact


Evan Elder, Licensing Associate
650-725-9558 (Mobile)
Request Info

[-] Map/Timeline

97-016 Improved Microfabrication of Acoustic Transducers
97-166 Simultaneous Multi-Channel bit Serial Multiplication and Quantization
97-245 Reordering Memory References (MIT Case No. 8142)

more technologies »

Related Keywords


field-effect transistors   non-volatile memory   semiconductors   semiconductor: memory   compound semiconductor   Germanium   high performance computing   MOSFET   nanostructure   semiconductor: chip architecture   SiGe   VLSI   CMOS   integrated circuits   
 

   

  

Also of Interest...
97-016 Improved Microfabrication of Acoustic Transducers
97-166 Simultaneous Multi-Channel bit Serial Multiplication and Quantization
97-245 Reordering Memory References (MIT Case No. 8142)

Recently Viewed...
S06-093 A Novel Heterostructure FET with High On Current and Low Leakage