Notice: Undefined index: HTTP_ACCEPT_LANGUAGE in C:\inetpub\wwwroot\technology_detail.php on line 331
 Technology Detail


The Office of Technology Licensing was established in 1970 to transfer technologies developed at Stanford. Find out more about OTL's history, mission, staff, and statistics.

Login to TechFinder » 

MEMS sensors from epitaxially grown piezoresistors


Stanford Reference:

06-240


Abstract


Stanford engineers have created a patented method for fabricating highly sensitive piezoresistors on vertical walls of microstructures by epitaxial growth of doped silicon. In-plane inertial sensors produced with this technique are up to 7 times more sensitive with a lower noise level than their ion-implanted counterparts. These benefits are achieved by growing mono-crystalline piezoresistors on a mono-crystalline substrate (epitaxial crystal growth), which creates an efficient, high-quality sensing structure. End user applications for this technology include accelerometers, gyroscopes and shear stress sensors.


Scanning electron microscopy (SEM) image of sidewall epitaxial piezoresistors on an unreleased cantilever using a selective deposition process.

Stage of Research
The inventors built and tested the piezoresistors and demonstrated sensitivity and resolution comparable to single-crystal ion implanted piezoresistors and better than most polysilicon or diffusion-based piezoresistors.

Applications


  • Force sensors - higher quality, smaller inertial and force sensors with end user applications such as:
    • Accelerometers
    • Gyroscopes
    • Shear stress sensors
    • Other in-plane force and stress sensors

Advantages


  • Sensitive - better sensitivity and lower noise than implanted piezoresistor based sensors and other current options
  • Simple and scalable:
    • piezoresistors offer greater simplicity and miniaturization than optical and capacitive type sensors
    • potential to miniaturize sensors to sub-micron or nanoscale sizes
  • Better force resolution
  • Robust - low susceptibility to heat variation

Publications



Innovators & Portfolio



Patent Status



Date Released

 5/18/2015
 

Licensing Contact


Anne Kopf-Sill, Licensing Associate
(650)498-8015 (Business)
Login to Request Information

[-] Map/Timeline

93-173 All Fiber Polarization Splitting Switch
95-041 Polarized Unidirectional Superfluorescent Fiber Sources
95-086 Micromachined Fluidic Interconnect with deep reactive ion etching (DRIE) for precise interconnect capillaries

more technologies »

Related Keywords


cantilever   force sensor   MEMS sensors   gyroscope   accelerometers   sensors   Piezoresistor   piezoresistive   06-240   contact sensor   piezoelectric   micromachined sensors   pressure sensors   mechanical sensors   microfabrication   sensors: aircraft   strain sensor   inertial measurement   Inertial sensors   mobile inertia sensors   
 

   

  

Also of Interest...
93-173 All Fiber Polarization Splitting Switch
95-041 Polarized Unidirectional Superfluorescent Fiber Sources
95-086 Micromachined Fluidic Interconnect with deep reactive ion etching (DRIE) for precise interconnect capillaries

Recently Viewed...
S06-240 MEMS sensors from epitaxially grown piezoresistors