The Office of Technology Licensing was established in 1970 to transfer technologies developed at Stanford. Find out more about OTL's history, mission, staff, and statistics.

Login to TechFinder » 

MEMS sensors from epitaxially grown piezoresistors


Stanford Reference:

06-240


Abstract


Stanford engineers have created a patented method for fabricating highly sensitive piezoresistors on vertical walls of microstructures by epitaxial growth of doped silicon. In-plane inertial sensors produced with this technique are up to 7 times more sensitive with a lower noise level than their ion-implanted counterparts. These benefits are achieved by growing mono-crystalline piezoresistors on a mono-crystalline substrate (epitaxial crystal growth), which creates an efficient, high-quality sensing structure. End user applications for this technology include accelerometers, gyroscopes and shear stress sensors.


Scanning electron microscopy (SEM) image of sidewall epitaxial piezoresistors on an unreleased cantilever using a selective deposition process.

Stage of Research
The inventors built and tested the piezoresistors and demonstrated sensitivity and resolution comparable to single-crystal ion implanted piezoresistors and better than most polysilicon or diffusion-based piezoresistors.

Applications


  • Force sensors - higher quality, smaller inertial and force sensors with end user applications such as:
    • Accelerometers
    • Gyroscopes
    • Shear stress sensors
    • Other in-plane force and stress sensors

Advantages


  • Sensitive - better sensitivity and lower noise than implanted piezoresistor based sensors and other current options
  • Simple and scalable:
    • piezoresistors offer greater simplicity and miniaturization than optical and capacitive type sensors
    • potential to miniaturize sensors to sub-micron or nanoscale sizes
  • Better force resolution
  • Robust - low susceptibility to heat variation

Publications



Innovators & Portfolio



Patent Status



Date Released

 5/18/2015
 

Licensing Contact


Anne Kopf-Sill, Licensing Associate
(650)498-8015 (Business)
Login to Request Information

[-] Map/Timeline

93-173 All Fiber Polarization Splitting Switch
95-041 Polarized Unidirectional Superfluorescent Fiber Sources
95-086 Micromachined Fluidic Interconnect with deep reactive ion etching (DRIE) for precise interconnect capillaries

more technologies

Related Keywords


cantilever   force sensor   MEMS sensors   gyroscope   accelerometers   sensors   Piezoresistor   piezoresistive   06-240   contact sensor   piezoelectric   micromachined sensors   pressure sensors   mechanical sensors   microfabrication   sensors: aircraft   strain sensor   inertial measurement   Inertial sensors   mobile inertia sensors   
 

   

  

Also of Interest...
93-173 All Fiber Polarization Splitting Switch
95-041 Polarized Unidirectional Superfluorescent Fiber Sources
95-086 Micromachined Fluidic Interconnect with deep reactive ion etching (DRIE) for precise interconnect capillaries

Recently Viewed...
S06-240 MEMS sensors from epitaxially grown piezoresistors