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Precise Control of Quantum Confinements by Atomic Layer Deposition


Stanford Reference:

10-056


Abstract


Engineers in Stanford’s Nanoscale Prototyping Lab have developed a scalable atomic layer deposition (ALD) fabrication method to produce quantum confinements with precise, sub-nm thickness and complex 3-D architectures. This technique uses irradiation (from photons, electrons or ions) to influence the nucleation behavior of the materials during the initial deposition cycles. This enables control of optical and electrical properties of ALD films by manipulating nucleation size, density or chemistry as well as film morphology. This ALD method can be used for in-situ or ex-situ manufacturing of quantum wells, wires or dots for a variety of optoelectronic end-user applications.


Quantum dots deposited by ALD and merged during e-beam irradiation. Irradiation can control the size of the quantum dots by merging. Bright-field TEM images of nanostructured films are shown below.

Stage of Research
The concept has been proven in lab-scale reactors depositing nanostructures over <100cm2 areas.

Applications


  • Fabrication of quantum confinements - quantum wells, wires or dots for improved performance of end-user applications such as:
    • solar cells
    • catalysts
    • batteries
    • lasers
    • other optoelectronic devices.

Advantages


  • Sub-nm precision of feature size and density
  • Ability to create complex 3-D architectures, including structures with high aspect ratios
  • Scalable - ALD enables large scale manufacturing of quantum confinements with a small amount of material used
  • Tunable - control optical and electrical properties of nano-materials by adjusting feature size, shape and density on the surface
  • In-situ or ex-situ manufacturing with low vacuum levels and temperatures compared to MBE or CVD fabrication

Publications



Nanostructured PbS Film


Bright-field TEM images at low and high magnification of ALD PbS films deposited directly onto SiO2 membrane TEM grids as a function of number of ALD cycles.

Related Web Links



Innovators & Portfolio



Patent Status



Date Released

 10/23/2014
 

Licensing Contact


Luis Mejia, Senior Licensing Associate
(650) 725-9409 (Direct)
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Related Keywords


deposition   atomic layer deposition   quantum well   quantum dot   thin film deposition   
 

   

  

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