Docket #: S13-466
Laser liftoff of epitaxial thin film structures
Electronic devices made from single crystal thin films attached to inexpensive support substrates offer reduced material costs compared to wafer-based devices; however, scalable and inexpensive processes for producing these single crystal film structures have remained elusive. Stanford researchers have demonstrated a new approach for fabricating these structures that is orders of magnitude faster, and enables more freedom in the selection of other device layers. In this approach, an epitaxial film is grown on a single crystal template and is then separated from its growth surface by laser-driven delamination. It is applicable to all semiconductor electronic and optoelectronic devices, such as solar cells, light emitting diodes (LEDs), and transistors.
Stanford process makes high-performance solar cells cheaper
Stage of Research
Applications
- Applicable to all semiconductor, electronic and optoelectronic devices, such as solar cells, light emitting diodes (LEDs), and transistors
Advantages
- Uses lower materials cost, and faster processing times
- Enables the rapid separation of epitaxial III-V materials and devices from a III-V growth substrate
- Allows for reuse of the growth substrate
- Enables more freedom in the selection of other device layers
- GaAs wafers can be on a cost competitive basis with Si and other semiconductors
- Improves upon current practice of selective etching
Publications
- Garrett J. Hayes, Bruce M. Clemens (2014) Laser Liftoff of GaAs Thin Films ArXiv, arXiv:1408.1977.
Related Links
Patents
- Published Application: WO2015077779
- Issued: 9,698,053 (USA)
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