Researchers in Stanford University's EXtreme Environment Microsystems Laboratory (XLab) working in collaboration with the University of Arkansas' Mixed-Signal Computer-Aided Design (MSCAD) Laboratory developed a Hall-effect sensor design that detects ultra fast changes in the
Researchers in the Stanford University Power Electronics Research Lab have designed an easy to implement, high-efficiency, high-frequency power amplifier with low voltage stress.
Stanford researchers have designed a high-voltage cascode GaN/SiC device combining the advantages of both a GaN and an SiC device (i.e. reduced gate loss/simple gate drive requirements)