Researchers at Stanford University have developed Schottky contacts for aluminum nitride-based microelectronic devices. The contacts enable reliable device operation at up to 600 ºC, opening up opportunities for high temperature microelectronic performance.
Stanford researchers in the Pop Lab have developed a method of making low resistance, good conductivity, temperature tolerant, CMOS processing compatible contacts for 2d semiconductor materials based on transition metal dihalcogenides (TMD's).
During post-silicon validation and debug, manufactured integrated circuits (ICs) are tested in actual system environments to detect and fix design flaws (bugs). Existing techniques are costly due to ad hoc, manual methods.
Researchers in the Stanford University Power Electronics Research Lab have designed an easy to implement, high-efficiency, high-frequency power amplifier with low voltage stress.
Researchers at Stanford have developed a method to tune power amplifier circuits to directly connect their output power (and adjust the combined output power) without any additional power combiner network.
Researchers at Stanford have developed a non-destructive method for generating and patterning optical color centers with nanoscale resolution without the need for high energy radiation. Color centers, which are optically active defects within the lattice structur
Stanford researchers have developed a damage free method for activating buried p-type or Mg-doped epitaxial layers in III-nitride devices that improves performance and can reduce device cost when used as edge termination.
Stanford researchers have designed a high-voltage cascode GaN/SiC device combining the advantages of both a GaN and an SiC device (i.e. reduced gate loss/simple gate drive requirements)
Magnetic field measurements using currently available devices require complex switching circuitry to mitigate the offset and noise present in measurements.
Engineers in Prof. Zhenan Bao's laboratory have developed a fully elastic, highly stretchable fluorinated polymer that can be used as a photoresist with standard lithography techniques for precise patterning of flexible electronic devices.
Researchers at the SLAC National Accelerator Laboratory have developed a cost-effective method for using low temperature microwave annealing to create diode termination contacts on silicon sensors.
Researchers in Stanford's Nanoscale Prototyping Laboratory have developed a simple, high throughput method to fabricate ultra-thin, defect-free, single crystal silicon sheets at a competitive cost.