Stanford researchers in the Pop Lab have developed a method of making low resistance, good conductivity, temperature tolerant, CMOS processing compatible contacts for 2d semiconductor materials based on transition metal dihalcogenides (TMD's).
Stanford researchers have developed a method to fabricate highly efficient Si/TMDs tandem solar cells which aims to break the 30% efficiency barrier with low cost and increased reliability.
Engineers in Prof. Krishna Saraswat's laboratory have developed a patented heterostructure channel transistor based on III-V semiconductor materials and designed for optimum hole transport.
Researchers at Stanford have developed a structure for a Low-Threshold Germanium laser that is easily integrable into electronic and photonic circuits, and competitive with current state-of-the-art III-V lasers.
Stanford researchers have developed a depletion-mode MOSFET-based phototransistor with sub-wavelength dimensions, extremely high responsivity and a low dark current.
Engineers in Prof. Krishna Saraswat's laboratory have developed a scalable 1-transistor (1T) dynamic random access memory (DRAM) with a gallium phosphide (GaP) source-drain on silicon.