Stanford researchers in the Pop Lab have developed a method of making low resistance, good conductivity, temperature tolerant, CMOS processing compatible contacts for 2d semiconductor materials based on transition metal dihalcogenides (TMD's).
Engineers in Prof. Krishna Saraswat's laboratory have developed a patented heterostructure channel transistor based on III-V semiconductor materials and designed for optimum hole transport.
Researchers at Stanford have developed a structure for a Low-Threshold Germanium laser that is easily integrable into electronic and photonic circuits, and competitive with current state-of-the-art III-V lasers.
Engineers in Prof. Krishna Saraswat's laboratory have developed a scalable 1-transistor (1T) dynamic random access memory (DRAM) with a gallium phosphide (GaP) source-drain on silicon.