Researchers in the Stanford University Power Electronics Research Lab have designed an easy to implement, high-efficiency, high-frequency power amplifier with low voltage stress.
Stanford researchers have designed a high-voltage cascode GaN/SiC device combining the advantages of both a GaN and an SiC device (i.e. reduced gate loss/simple gate drive requirements)
Researchers in Dr. Juan Rivas-Davila's lab have developed 3D printing methods to make aircore inductors and capacitors with more complex geometries and functionality than components using printed circuit boards.