Researchers at Stanford have developed a technique that can rapidly and sequentially separate multiple sets of III-V solar cell thin films grown as a stack on one III-V wafer.
We present a revolutionary advancement in ferroelectric materials that is set to redefine the landscape of embedded memories and semiconductor technologies.
Scientists in the Zhenan Bao Research Group at Stanford developed a process for direct photo-patterning of electronic polymers that improves device density of elastic circuits over 100x.
Use of diamond in high power and high temperature electronics is ideal due to its inherent properties, notably an ultra-high critical electric field of 10 MW/cm. Electronic devices require p-n junctions to achieve these electric fields, and thus n-doped diamond is required.
Stanford researchers in the Fan Lab have developed a photonic device optimizer that generates designs with hard geometric constraints to guarantee device fabricability.
Stanford researchers in the Fan Lab have developed a method that dramatically accelerates and optimizes metamaterial design with little computational resource and time using generative neural networks.
Researchers at Stanford have developed a non-destructive method for generating and patterning optical color centers with nanoscale resolution without the need for high energy radiation. Color centers, which are optically active defects within the lattice structur
Researchers in Stanford's Nanoscale Prototyping Laboratory have developed a simple, high throughput method to fabricate ultra-thin, defect-free, single crystal silicon sheets at a competitive cost.
Stanford researchers patented a method to design, computationally optimize and fabricate efficient optical devices using semiconducting and dielectric nanostructures.
Researchers in Profs. Jonathan Fan and Jim Plummer's laboratory have patented a generalized, CMOS-compatible process to fabricate single crystal metal components on amorphous insulator substrates.
These light trapping solar cell structures increase optical absorption and carrier collection, improving efficiency by 24%, while significantly reducing the solar cell active layer thickness and thus lowering cost.
Researchers at Stanford have developed a structure for a Low-Threshold Germanium laser that is easily integrable into electronic and photonic circuits, and competitive with current state-of-the-art III-V lasers.