Researchers in the Stanford University Power Electronics Research Lab have designed an easy to implement, high-efficiency, high-frequency power amplifier with low voltage stress.
Stanford researchers have designed a high-voltage cascode GaN/SiC device combining the advantages of both a GaN and an SiC device (i.e. reduced gate loss/simple gate drive requirements)
Engineers in Prof. Zhenan Bao's laboratory have developed a fully elastic, highly stretchable fluorinated polymer that can be used as a photoresist with standard lithography techniques for precise patterning of flexible electronic devices.
Researchers at the SLAC National Accelerator Laboratory have developed a cost-effective method for using low temperature microwave annealing to create diode termination contacts on silicon sensors.
Researchers in Stanford's Nanoscale Prototyping Laboratory have developed a simple, high throughput method to fabricate ultra-thin, defect-free, single crystal silicon sheets at a competitive cost.
Stanford researchers have patented a fabrication process for monolithic integration of different epitaxial materials on the same substrate for improved coupling of optoelectronic devices.
Stanford researchers patented a method to design, computationally optimize and fabricate efficient optical devices using semiconducting and dielectric nanostructures.
Researchers in Profs. Jonathan Fan and Jim Plummer's laboratory have patented a generalized, CMOS-compatible process to fabricate single crystal metal components on amorphous insulator substrates.
Stanford University and Samsung researchers have patented a microfluidic-based platform that can rapidly fabricate and characterize Organic Thin Film Transistor (OTFT) arrays composed of solution-processable organic semiconducting polymers.
Stanford researchers have developed an elastomer polymer dielectric for high performance transistors with both high gain and high transconductance, which also shows unprecedented high bias-stress stability in air and water.