Researchers in the Stanford University Power Electronics Research Lab have designed an easy to implement, high-efficiency, high-frequency power amplifier with low voltage stress.
Stanford researchers have developed a damage free method for activating buried p-type or Mg-doped epitaxial layers in III-nitride devices that improves performance and can reduce device cost when used as edge termination.
Stanford researchers have designed a high-voltage cascode GaN/SiC device combining the advantages of both a GaN and an SiC device (i.e. reduced gate loss/simple gate drive requirements)