S20-330 Two-Fold Reduction of Switching Current Density in Phase-Change Memory Researchers at Stanford have developed a low-power phase-change memory (PCM) technology with interfacial thermoelectric heating enhancement. Asir Intisar Khan Eric Pop Raisul Islam H.-S. Philip Wong Kenneth Goodson Mehdi Asheghi Heungdong Kwon
S15-116 Energy-efficient phase change memory This patented technology is a scalable, reliable non-volatile memory device that uses graphene as a thermal barrier to improve energy efficiency and reliability of phase change material (PCM). Ethan Ahn Scott Fong Yongsung Kim Seunghyun Lee Aditya Sood Christopher Neumann Mehdi Asheghi Kenneth Goodson Eric Pop H.-S. Philip Wong