Heterogenous Integration of Diamond and GaN Transistors for Complementary Logic Operation

This invention is a set of structures and associated processes to integrate GaN with Diamond to develop a full complementary CMOS device capable of operation in high power and high temperature applications. GaN HEMTs take the advantage of its high mobility 2-dimensional electron gas (2DEG) at the interface of AlGaN/GaN, where electrons move freely in a quantum well due to the presence of polarization charge. On the other hand, diamond exhibits the highest breakdown field (10 MV/cm), the largest thermal conductivity (>20 W/cm.K) of any of the wide-bandgap materials with a bandgap of about 5.45 eV, can provide a high density 2-dimensional hole gas (2DHG) at the surface. Therefore, 2DHG from a hydrogen terminated diamond (hole-FET) can make a complementary logic with 2DEG from AlGaN/GaN HEMT.

Stage of Development