We present a revolutionary advancement in ferroelectric materials that is set to redefine the landscape of embedded memories and semiconductor technologies.
Scientists in the Zhenan Bao Research Group at Stanford developed a process for direct photo-patterning of electronic polymers that improves device density of elastic circuits over 100x.
Engineers in Prof. Zhenan Bao's laboratory have developed a fully elastic, highly stretchable fluorinated polymer that can be used as a photoresist with standard lithography techniques for precise patterning of flexible electronic devices.
Stanford researchers at the Khuri-Yakub Lab have developed a new sensor topology that will enable high-resolution touch sensing and reliable authentication on portable electronics.