We present a revolutionary advancement in ferroelectric materials that is set to redefine the landscape of embedded memories and semiconductor technologies.
Scientists in the Zhenan Bao Research Group at Stanford developed a process for direct photo-patterning of electronic polymers that improves device density of elastic circuits over 100x.
Researchers in the Fan group have developed a method for epitaxial growth of double heterojunction semiconductor diodes capable of suppressing parasitic non-radiative recombination effects.
Engineers in Prof. Zhenan Bao's laboratory have developed a fully elastic, highly stretchable fluorinated polymer that can be used as a photoresist with standard lithography techniques for precise patterning of flexible electronic devices.
This invention is an efficient and very small high frequency inductor developed by Stanford researchers and made on an active substrate, such as silicon.
Stanford researchers at the Khuri-Yakub Lab have developed a new sensor topology that will enable high-resolution touch sensing and reliable authentication on portable electronics.