S04-132 A Method for Heteroepitaxial Growth of Germanium on Silicon Stanford researchers have patented a growth and anneal process for growing heteroepitaxial-germanium directly onto silicon. Krishna Saraswat Chi On Chui Ammar Nayfeh Takao Yonehara
S13-424 Tunable, Integrated Magnetoelectric Components for Wireless RF Communications Engineers in Prof. Shan Wang's laboratory have developed a CMOS-compatible fabrication method to integrate compact, tunable magnetic components into mainstream semiconductor electronic devices. Amal El-Ghazaly Shan Wang