Stanford researchers have patented a crystalline germanium nanostructure device and method of forming a continuous polycrystalline Ge film (5-500nm thick poly-Ge) with crystalline Ge islands of preferred orientation.
Stanford researchers have developed and tested a new method of stably and strongly doping CNTs and graphene using MoOx as a nontoxic, inexpensive, vacuum or solution deposited alternative to strong liquid acids.