Stanford researchers have developed a hierarchical event readout method that solves a major latency problem in event-based image sensors. Event-based sensors output data only when pixels change, enabling fast and efficient sensing.
Complementary metal-oxide-semiconductor (CMOS) is critical semiconductor technology that utilizes both n-type and p-type field-effect transistors (FETs).
Image sensors are used across the board in high-resolution image sensing technologies, and critically rely on their ability to separate colors of light.
Stanford researchers have patented a silicon germanium (SiGe) electroabsorption modulator that can operate well in excess of 10 Gbps and is entirely compatible with Silicon (Si) complementary metal-oxide semiconductor (CMOS) integrated circuit fabrication.
Stanford researchers have patented a fabrication process for monolithic integration of different epitaxial materials on the same substrate for improved coupling of optoelectronic devices.
Engineers in Prof. Shan Wang's laboratory have developed a CMOS-compatible fabrication method to integrate compact, tunable magnetic components into mainstream semiconductor electronic devices.
Researchers in Stanford's Nanoscale Prototyping Laboratory have developed a low-temperature process for fabricating etch-resistant, pinhole-free spacer dielectrics a few nanometers thick.
Stanford researchers have patented an image sensor that overcomes frame rate and power consumption limits for high-speed mega-pixel imaging, and therefore can extend battery life for mobile phone cameras.