Engineers in Prof. H.-S. Philip Wong's laboratory have developed a lower power, three-dimensional resistive random access memory (RRAM) device using an atomically thin graphene edge electrode.
This patented technology is a scalable, reliable non-volatile memory device that uses graphene as a thermal barrier to improve energy efficiency and reliability of phase change material (PCM).
Stanford researchers have developed a novel method for wafer-scale production of aligned and ultra-high density carbon nanotubes (CNTs) and nanotube grid.