We present a revolutionary advancement in ferroelectric materials that is set to redefine the landscape of embedded memories and semiconductor technologies.
Scientists in the Zhenan Bao Research Group at Stanford developed a process for direct photo-patterning of electronic polymers that improves device density of elastic circuits over 100x.
Stanford researchers have developed new Fast Quick Error Detection (Fast QED) tests that are four orders of magnitude faster than standard QED tests while also preserving quick error detection properties.
The Foundational QED embodies a set of source code files for performing the basic EDDI, CFCSS, and CFTSS QED transformations for creating tests with extremely short error detection latencies and high error detection coverage.
During post-silicon validation and debug, manufactured integrated circuits (ICs) are tested in actual system environments to detect and fix design flaws (bugs). Existing techniques are costly due to ad hoc, manual methods.
Researchers at Stanford have demonstrated a new type of energy-efficient and ultrathin memory. This low-energy cost memory is based on stacking orders in the atomically thin limit, associated with tiny changes in the position of one atomic layer with respect to another.
Engineers in Prof. Zhenan Bao's laboratory have developed a fully elastic, highly stretchable fluorinated polymer that can be used as a photoresist with standard lithography techniques for precise patterning of flexible electronic devices.
Engineers in Prof. H.-S. Philip Wong's laboratory have developed a lower power, three-dimensional resistive random access memory (RRAM) device using an atomically thin graphene edge electrode.
This patented technology is a scalable, reliable non-volatile memory device that uses graphene as a thermal barrier to improve energy efficiency and reliability of phase change material (PCM).
Stanford researchers at the Khuri-Yakub Lab have developed a new sensor topology that will enable high-resolution touch sensing and reliable authentication on portable electronics.
Stanford researchers have patented a crystalline germanium nanostructure device and method of forming a continuous polycrystalline Ge film (5-500nm thick poly-Ge) with crystalline Ge islands of preferred orientation.