Researchers in Stanford University's EXtreme Environment Microsystems Laboratory (XLab) working in collaboration with the University of Arkansas' Mixed-Signal Computer-Aided Design (MSCAD) Laboratory developed a Hall-effect sensor design that detects ultra fast changes in the
Stanford Nanoscale and Quantum Photonics Lab researchers developed a passive, magnet free, integrated on-chip laser stabilization and isolation device. Lasers need a way to prevent the light they emit from reflecting into the laser and destabilizing it.
Stanford researchers at the Poon Lab have developed a method for battery-less, short range transmission of data with very low power and very high data rates. It can potentially replace current near field communications (NFC) systems due to these advantages.
Researchers at Stanford have developed a method to tune power amplifier circuits to directly connect their output power (and adjust the combined output power) without any additional power combiner network.
Stanford researchers developed a method to make large phase shifts with little or no power dissipation in integrated optics. The approach uses a directional coupler moved by a MEMS actuator to achieve a path delay, i.e. an effective change in refractive index.
Stanford researchers have patented a silicon germanium (SiGe) electroabsorption modulator that can operate well in excess of 10 Gbps and is entirely compatible with Silicon (Si) complementary metal-oxide semiconductor (CMOS) integrated circuit fabrication.
Stanford researchers have patented a fabrication process for monolithic integration of different epitaxial materials on the same substrate for improved coupling of optoelectronic devices.
Stanford researchers patented a method to design, computationally optimize and fabricate efficient optical devices using semiconducting and dielectric nanostructures.
Researchers in Profs. Jonathan Fan and Jim Plummer's laboratory have patented a generalized, CMOS-compatible process to fabricate single crystal metal components on amorphous insulator substrates.
Researchers at Stanford have developed a structure for a Low-Threshold Germanium laser that is easily integrable into electronic and photonic circuits, and competitive with current state-of-the-art III-V lasers.
Engineers in Prof. Shan Wang's laboratory have developed a CMOS-compatible fabrication method to integrate compact, tunable magnetic components into mainstream semiconductor electronic devices.