The Fan Lab at Stanford University has developed an ultra-fast, physics-augmented, deep learning enhanced surrogate field solver for high-speed electromagnetic simulation and optimization. Denoising WaveY-Net uses a two-stage approach to target different field error sources.
Researchers in the DeSimone Research Group have developed a high-resolution injection Continuous Liquid Interface Production (iCLIP) 3D printing process.
Researchers at Stanford have developed a new synthetic strategy for self-assembling layered heterostructures into large single crystals and films useful in microelectronics.
Scientists in the Zhenan Bao Research Group at Stanford developed a process for direct photo-patterning of electronic polymers that improves device density of elastic circuits over 100x.
Stanford researchers have developed a high efficiency OLED device by nanopatterning the electrode layer to create a high impedance metasurface (HIM) that reduces 'plasmonic' losses. A typical metal cathode traps a large portion of generated light in an OLED.
Stanford researchers have developed a method for etching microchannels through silicon substrates. Specifically, this method can produce wafers where the two sides have different features as well as through channels.
Researchers in the Stanford University Power Electronics Research Lab have designed an easy to implement, high-efficiency, high-frequency power amplifier with low voltage stress.
Use of diamond in high power and high temperature electronics is ideal due to its inherent properties, notably an ultra-high critical electric field of 10 MW/cm. Electronic devices require p-n junctions to achieve these electric fields, and thus n-doped diamond is required.
This invention is a set of structures and associated processes to integrate GaN with Diamond to develop a full complementary CMOS device capable of operation in high power and high temperature applications.
Stanford researchers have designed a high-voltage cascode GaN/SiC device combining the advantages of both a GaN and an SiC device (i.e. reduced gate loss/simple gate drive requirements)
Magnetic field measurements using currently available devices require complex switching circuitry to mitigate the offset and noise present in measurements.
Engineers in Prof. Zhenan Bao's laboratory have developed a fully elastic, highly stretchable fluorinated polymer that can be used as a photoresist with standard lithography techniques for precise patterning of flexible electronic devices.
Researchers at the SLAC National Accelerator Laboratory have developed a cost-effective method for using low temperature microwave annealing to create diode termination contacts on silicon sensors.
Researchers in Stanford's Nanoscale Prototyping Laboratory have developed a simple, high throughput method to fabricate ultra-thin, defect-free, single crystal silicon sheets at a competitive cost.