Researchers at Stanford University have developed Schottky contacts for aluminum nitride-based microelectronic devices. The contacts enable reliable device operation at up to 600 ºC, opening up opportunities for high temperature microelectronic performance.
This invention is a set of structures and associated processes to integrate GaN with Diamond to develop a full complementary CMOS device capable of operation in high power and high temperature applications.
Magnetic field measurements using currently available devices require complex switching circuitry to mitigate the offset and noise present in measurements.
Researchers at the SLAC National Accelerator Laboratory have developed a cost-effective method for using low temperature microwave annealing to create diode termination contacts on silicon sensors.
Researchers in the Robust Systems Group at Stanford University developed a method for dividing the available resistance window in a multi-bit per cell Resistive RAM into varying resistance distributions to improve read and program performance.
Stanford researchers have for the first time, demonstrated the use of scaffolding to increase the mechanical and chemical stability of perovskite solar cells.
Stanford researchers developed a strong, flexible, high heat transfer architecture for electronics packaging interfacial material. The resins currently used in electronics packaging are a thermal management bottleneck.