Researchers at Stanford have developed a method to tune power amplifier circuits to directly connect their output power (and adjust the combined output power) without any additional power combiner network.
Researchers in the Fan group have developed a method for epitaxial growth of double heterojunction semiconductor diodes capable of suppressing parasitic non-radiative recombination effects.
Stanford researchers have developed a damage free method for activating buried p-type or Mg-doped epitaxial layers in III-nitride devices that improves performance and can reduce device cost when used as edge termination.
Stanford researchers have designed a high-voltage cascode GaN/SiC device combining the advantages of both a GaN and an SiC device (i.e. reduced gate loss/simple gate drive requirements)
Engineers in Prof. Zhenan Bao's laboratory have developed a fully elastic, highly stretchable fluorinated polymer that can be used as a photoresist with standard lithography techniques for precise patterning of flexible electronic devices.
Stanford researchers have patented a silicon germanium (SiGe) electroabsorption modulator that can operate well in excess of 10 Gbps and is entirely compatible with Silicon (Si) complementary metal-oxide semiconductor (CMOS) integrated circuit fabrication.
Stanford researchers have patented a fabrication process for monolithic integration of different epitaxial materials on the same substrate for improved coupling of optoelectronic devices.
Engineers in Prof. Krishna Saraswat's laboratory have developed a patented heterostructure channel transistor based on III-V semiconductor materials and designed for optimum hole transport.
Stanford researchers patented a method to design, computationally optimize and fabricate efficient optical devices using semiconducting and dielectric nanostructures.
Researchers in Profs. Jonathan Fan and Jim Plummer's laboratory have patented a generalized, CMOS-compatible process to fabricate single crystal metal components on amorphous insulator substrates.
Stanford researchers at the Cui Lab have designed a self-aligned hybrid metal-dielectric surface that offers unparalleled performance in applications where both a transparent contact and a photon management texture are needed.